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DMN53D0LV - DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR

Datasheet Summary

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Very Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/ Output Leakage.
  • Ultra-Small Surface-Mount Package.
  • ESD Protected to 2kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Datasheet preview – DMN53D0LV

Datasheet Details

Part number DMN53D0LV
Manufacturer DIODES
File Size 609.40 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR
Datasheet download datasheet DMN53D0LV Datasheet
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DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 350mA 200mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Features and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/ Output Leakage  Ultra-Small Surface-Mount Package  ESD Protected to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.
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