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DMN55D0UT - N-CHANNEL ENHANCEMENT MODE MOSFET

Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • ESD Protected Gate to 2kV.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) DMN55D0UT N-.

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Datasheet Details

Part number DMN55D0UT
Manufacturer DIODES
File Size 426.19 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DMN55D0UT Datasheet
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Full PDF Text Transcription

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NEW PRODUCT Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  ESD Protected Gate to 2kV  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) DMN55D0UT N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data  Case: SOT523  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.
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