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DMN6040SFDE - N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test In Production.
  • 0.6mm Profile.
  • Ideal for Low-Profile.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Summary BVDSS 60V RDS(ON) Max Package 38mΩ @ VGS = 10V U-DFN2020-6 47mΩ @ VGS = 4.5V (Type E) ID Max TA = +25°C 6.5A 5.2A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  100% Unclamped Inductive Switch (UIS) Test In Production  0.6mm Profile – Ideal for Low-Profile Applications  PCB Footprint of 4mm2  Low On-Resistance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.