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DMN6040SVT - N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power management functions Bac

Key Features

  • 100% Unclamped Inductive Switch (UIS) test in production.
  • Low Input Capacitance.
  • Low On-Resistance.
  • Fast Switching Speed.
  • Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1).
  • "Green" Device (Note 2).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: TSOT26.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitiv.

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Full PDF Text Transcription for DMN6040SVT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN6040SVT. For precise diagrams, and layout, please refer to the original PDF.

ADVANCE INFORMATION DMN6040SVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(on) max 44mΩ @ VGS = 10V 60mΩ @ VGS = 4.5V ID TA = 25°C 5.0A 4.3A De...

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S(on) max 44mΩ @ VGS = 10V 60mΩ @ VGS = 4.5V ID TA = 25°C 5.0A 4.3A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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