Datasheet Summary
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS (@ TJ Max) 1000V
RDS(ON) 7Ω@VGS = 10V
ID TC = +25°C
2.5A
Description
This new generation MOSFET Features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Features
- Low Input Capacitance
- High BVDSS Rating for Power Application
- Low Input/Output Leakage
- Lead-Free Finish; RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
- Case: TO220AB (Type TH)
- Case Material: Molded Plastic, “Green” Molding pound, UL
Flammability...