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DMNH3010LK3 - N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting DC-DC Converters Power Management Functions Feat

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switch (UIS) test in production.
  • Low On-Resistance.
  • Fast Switching Speed.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: TO252 (DPAK).
  • Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Ra.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMNH3010LK3 Green 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 9.5mΩ @ VGS = 10V 11.5mΩ @ VGS = 4.5V ID Max TC = +25°C 55A 50A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  DC-DC Converters  Power Management Functions Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switch (UIS) test in production  Low On-Resistance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.