DMP1012UCB9
Description
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.
Key Features
- LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 8.2mΩ to Minimize On-State Losses Qg = 8.1nC for Ultra-Fast Switching
- Vgs(th) = -0.8V typ. for a Low Turn-On Potential
- CSP with Footprint 1.5mm × 1.5mm
- Height = 0.62mm for Low Profile
- ESD = 6kV HBM Protection of Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 &
- Halogen and Antimony Free. “Green” Device (Note
- Qualified to AEC-Q101 Standards for High Reliability
