DMP1018UCB9 - P-Channel MOSFET

Product Overview

Diodes

Datasheet Details

Part number	DMP1018UCB9
Manufacturer	DIODES
File Size	322.93 KB
Description	P-Channel MOSFET
Datasheet	DMP1018UCB9 Datasheet
Additional preview pages of the DMP1018UCB9 datasheet.

Product details

Description

This 1st generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.

Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.

Features

LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.9nC for Ultra-Fast Switching.
Vgs(th) = -0.8V typ. for a Low Turn-On Potential.
CSP with Footprint 1.5mm × 1.5mm.
Height = 0.62mm for Low Profile.
ESD = 3kV HBM Protection of Gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.

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Published: Mar 25, 2016 |