DMP1018UCB9 Description
This 1st generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by bining low thermal impedance with minimal RDS(on) per footprint area. Applications DC-DC Converters Battery Management Load Switch DMP1018UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET.
DMP1018UCB9 Key Features
- LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.9nC for Ultra-Fast
- Vgs(th) = -0.8V typ. for a Low Turn-On Potential
- CSP with Footprint 1.5mm × 1.5mm
- Height = 0.62mm for Low Profile
- ESD = 3kV HBM Protection of Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- Case: U-WLB1515-9
- Terminal Connections: See Diagram Below