Datasheet4U Logo Datasheet4U.com

DMP1081UCB4 - P-Channel MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 0.065Ω to Minimize On-State Losses Qg = 2.5nC for Ultra-Fast Switching.
  • Vgs(TH) = -0.5V Typ. for a Low Turn-On Potential.
  • CSP with Footprint 1.0mm × 1.0mm.
  • Height = 0.62mm for Low Profile.
  • ESD = 3kV HBM Protection of Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

📥 Download Datasheet

Datasheet preview – DMP1081UCB4

Datasheet Details

Part number DMP1081UCB4
Manufacturer DIODES
File Size 354.77 KB
Description P-Channel MOSFET
Datasheet download datasheet DMP1081UCB4 Datasheet
Additional preview pages of the DMP1081UCB4 datasheet.

📁 Similar Datasheet

  • DMP10H400SK3 - P-Channel MOSFET (INCHANGE)
  • DMP-BD755P - Blu-ray Disc Player Service Manual (Panasonic)
  • DMP-BD75GA - Blu-ray Disc Player Service Manual (Panasonic)
  • DMP-BD75GC - Blu-ray Disc Player Service Manual (Panasonic)
  • DMP-BD75GN - Blu-ray Disc Player Service Manual (Panasonic)
  • DMP-BD75GT - Blu-ray Disc Player Service Manual (Panasonic)
  • DMP-BD75GW - Blu-ray Disc Player Service Manual (Panasonic)
  • DMP-BD75P - Blu-ray Disc Player Service Manual (Panasonic)
  • DMP-BD75PC - Blu-ray Disc Player Service Manual (Panasonic)
  • DMP-BD75PU - Blu-ray Disc Player Service Manual (Panasonic)
Other Datasheets by Diodes

Full PDF Text Transcription

Click to expand full text
DMP1081UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) BVDSS -12V RDS(ON) 0.065Ω Qg 2.5nC Qgd 0.6nC ID -3.3A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 0.065Ω to Minimize On-State Losses Qg = 2.5nC for Ultra-Fast Switching  Vgs(TH) = -0.5V Typ. for a Low Turn-On Potential  CSP with Footprint 1.0mm × 1.0mm  Height = 0.62mm for Low Profile  ESD = 3kV HBM Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
Published: |