DMP1096UCB4
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Key Features
- LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 85mΩ to Minimize On-State Losses Qg = 3.7nC for Ultra-Fast Switching
- Vgs(th) = -0.6V typ. for a Low Turn-On Potential
- CSP with Footprint 1.0mm × 1.0mm
- Height = 0.62mm for Low Profile
- ESD = 3kV HBM Protection of Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 &
- Halogen and Antimony Free. “Green” Device (Note
- Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
- Case: U-WLB1010-4
- Terminal Connections: See Diag
