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DMP1200UFR4 - P-Channel MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power Management Functions Backlighting Load Switch X2-DFN1010-

Features

  • Low On-Resistance.
  • ESD Protected Gate.
  • Low Input/Output Leakage.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: X2-DFN1010-3.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminal Connections: See Diagram.
  • Terminals: Finish - NiPdAu Anne.

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Full PDF Text Transcription

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Product Summary V(BR)DSS -12V RDS(ON) 100mΩ @ VGS = -4.5 V 160mΩ @ VGS = -2.5V 200mΩ @ VGS = -1.8V 380mΩ @ VGS = -1.5V ID TA = +25°C -2A -1A -0.5A -0.2A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Power Management Functions  Backlighting  Load Switch X2-DFN1010-3 DMP1200UFR4 P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low On-Resistance  ESD Protected Gate  Low Input/Output Leakage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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