DMP2018LFK Datasheet | Diodes Incorporated

P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION NEW PRODUCT V(BR)DSS RDS(on)max 16mΩ @ VGS = -4.5V -20V 25mΩ @ VGS = -2.0V -10A ID TA = 25°C -12.8A Features and Benefits - - - - - - - Low On-Resistance Low Input Capacitance Low Input/Output Leakage ESD Protected Gate up to 2kV Lead Free by Design, RoHS pliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - - - - DC-DC Converters...