DMP2069UFY4 Datasheet | Diodes Incorporated

NEW PRODUCT Product Summary V(BR)DSS -20V RDS(ON) max 54mΩ @ VGS = -4.5V 90mΩ @ VGS = -1.8V ID max TA = 25°C -2.5A -1.8A P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - ESD Protected Up To 3kV - Lead Free By Design/RoHS pliant (Note 1) - "Green" Device, Halogen and Antimony Free (Note 2) - Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. -...