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DMP2070UCB6 - P-Channel MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Battery Management Load Switch Battery

Features

  • LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 55mΩ to Minimize On-State Losses Qg = 2.9nC for Ultra-Fast Switching.
  • Vgs(th) = -0.6V typ. for a Low Turn-On Potential.
  • CSP with Footprint 1.5mm × 1.0mm.
  • Height = 0.62mm for Low Profile.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: U-WLB1510-6.
  • Terminal.

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Datasheet preview – DMP2070UCB6

Datasheet Details

Part number DMP2070UCB6
Manufacturer DIODES
File Size 384.42 KB
Description P-Channel MOSFET
Datasheet download datasheet DMP2070UCB6 Datasheet
Additional preview pages of the DMP2070UCB6 datasheet.

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Full PDF Text Transcription

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NEW PRODUCT DMP2070UCB6 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary(Typ. @ VGS = -4.5V, TA = +25°C) VDSS -20V RDS(on) 55mΩ Qg 2.9nC Qgd 0.5nC ID -3.5A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • Battery Management • Load Switch • Battery Protection Features and Benefits  LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 55mΩ to Minimize On-State Losses Qg = 2.9nC for Ultra-Fast Switching  Vgs(th) = -0.6V typ. for a Low Turn-On Potential  CSP with Footprint 1.5mm × 1.0mm  Height = 0.
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