DMP2100UCB9 Datasheet | Diodes Incorporated

NEW PRODUCT DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -20V RDS(on) 80mΩ Qg 3.3nC Qgd 0.6nC ID -4A Description This new generation MOSFET is designed to minimize the on-state resistance (RD1D2(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits - LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 80mΩ to Minimize On-State Losses Qg = 3.3nC for Ultra-Fast Switching - Vgs(th) = -0.7V typ. for a Low Turn-On Potential - CSP with Footprint 1.5mm × 1.5mm - Height = 0.62mm for Low Profile - ESD = 3kV HBM Protection of Gate -...