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DMP2540UCB9 - P-Channel MOSFET

Description

This new generation MOSFET is designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Case: U-WLB1515-9 Terminal Connections: See Diagram Be

Features

  • LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 33mΩ to Minimize On-State Losses Qg = 4.8nC for Ultra-Fast Switching.
  • Vgs(th) = -0.6V typ. for a Low Turn-On Potential.
  • CSP with Footprint 1.5mm × 1.5mm.
  • Height = 0.62mm for Low Profile.
  • ESD = 6kV HBM Protection of Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Datasheet preview – DMP2540UCB9

Datasheet Details

Part number DMP2540UCB9
Manufacturer DIODES
File Size 384.38 KB
Description P-Channel MOSFET
Datasheet download datasheet DMP2540UCB9 Datasheet
Additional preview pages of the DMP2540UCB9 datasheet.

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Full PDF Text Transcription

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ADVANCE INNEFWORPRMOADTIUOCNT DMP2540UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -25V RDS(on) 33mΩ Qg 4.8nC Qgd 1.0nC ID -5.2A Features and Benefits  LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 33mΩ to Minimize On-State Losses Qg = 4.8nC for Ultra-Fast Switching  Vgs(th) = -0.6V typ. for a Low Turn-On Potential  CSP with Footprint 1.5mm × 1.5mm  Height = 0.62mm for Low Profile  ESD = 6kV HBM Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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