Datasheet Summary
N ENWEPWRPORDOUDCUTC T
Product Summary
V(BR)DSS -30V
RDS(on) max
20mΩ @ VGS = -10V 29mΩ @ VGS = -5V
ID TC = +25°C
-18.0A
-15.0A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
- Case: SO-8
- Case...