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DMS2095LFDB - P-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power management functions DMS2095LFDB P-CHANNEL ENHANCEMENT MODE

Key Features

  • MOSFET with Low RDS(ON).
  • minimize conduction losses.
  • Low Gate Threshold Voltage, -1.3V Max.
  • Schottky Diode with Low Forward Voltage Drop.
  • Low Profile, 0.5mm Max Height.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: U-DFN2020-6 Type B.
  • Case Material: Molded Plastic, “Gree.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEW PRODUCT Product Summary V(BR)DSS -20V VR 20V MOSFET RDS(on) max 95mΩ @ VGS = -4.5V 120mΩ @ VGS = -2.5V 150mΩ @ VGS = -1.8V SCHOTTKY DIODE VF max 400mV @ IF = 0.5A 470mV @ IF = 1.0A ID -3.4A -3.0A -2.7A IO 1.0A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Power management functions DMS2095LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE Features and Benefits • MOSFET with Low RDS(ON) – minimize conduction losses • Low Gate Threshold Voltage, -1.3V Max • Schottky Diode with Low Forward Voltage Drop • Low Profile, 0.