DMS2120LFWB Description
NEW PRODUCT DMS2120LFWB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR® SUPER BARRIER RECTIFIER.
DMS2120LFWB Key Features
- Low On-Resistance
- 95mΩ @VGS = -4.5V
- 120mΩ @VGS = -2.5V
- 150mΩ (typ) @VGS = -1.8V
- Low Gate Threshold Voltage, -1.3V Max
- Fast Switching Speed
- Low Input/Output Leakage
- Incorporates Low VF Super Barrier Rectifier (SBR)
- Low Profile, 0.5mm Max Height
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)