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DMS2220LFDB - P-Channel MOSFET

Key Features

  • Low On-Resistance.
  • 95m @VGS = -4.5V.
  • 120m @VGS = -2.5V.
  • 86m (Typ) @VGS = -1.8V.
  • Low Gate Threshold Voltage, -1.3V Max.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Incorporates Low VF Super Barrier Rectifier (SBR®).
  • Low Profile, 0.5mm Max Height.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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DMS2220LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR SUPER BARRIER RECTIFIER Features  Low On-Resistance  95m @VGS = -4.5V  120m @VGS = -2.5V  86m (Typ) @VGS = -1.8V  Low Gate Threshold Voltage, -1.3V Max  Fast Switching Speed  Low Input/Output Leakage  Incorporates Low VF Super Barrier Rectifier (SBR®)  Low Profile, 0.5mm Max Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.