Diodes Incorporated DMT10H009LCG
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.| Part No. | DMT10H009LCG |
|---|---|
| Datasheet | DMT10H009LCG Download |
| Manufacturer |  Diodes Incorporated |
| Description | 100V N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
andAPPLICATIONS
● Backlighting● Power Management Functions
● DC-DC Converters
FEATURES AND BENEFITS
● 100% Unclamped Inductive Switch (UIS) Test in Production● High Conversion Efficiency
● Low RDS(ON) – Minimizes On State Losses
● Low Input Capacitance
● Fast Switching Speed
● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
● Halogen and Antimony Free. “Green” Device (Note 3)
MECHANICAL DATA
● Case: V-DFN3333-8 (Type B)● Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
● Moisture Sensitivity: Level 1 per J-STD-020
● Terminal Connections Indicator: See Below Diagram
● Terminals: Finish –NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4
● Weight: 0.03 grams (Approximate) Top View Pin 1 SS S G D DDD Bottom View D Top View Internal Schematic G S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number Case Packaging DMT10H009LCG-7 V-DFN3333-8 (Type B) 2,000/Tape & Reel DMT10H009LCG-13 V-DFN3333-8 (Type B) 3,000/Tape & Reel 1.
