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DMT2004UFDF - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCED INFORMATION DMT2004UFDF N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 24V RDS(ON) Max 6.0mΩ @ VGS = 10V 7.2mΩ @ VGS = 4.5V 12.5mΩ @ VGS = 2.5V ID Max TA = +25°C 14.1A 12.9A 9.8A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.