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DMT3006LDK - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters V-DFN3030-8 (Type Q) Fe

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: V-DFN3030-8 (Type Q).
  • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminal Connections Indicator: See Diagram.
  • Terminals:.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADAVDAAVDNAVCNAECNDECIDENI IFNNNOFEFROWORMRPAMRMTAIOATOIDTINOUONCNT DMT3006LDK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS 30V RDS(ON) Max 6.5mΩ @ VGS = 10V 10mΩ @ VGS = 4.5V ID Max TC = +25°C 46.2A 37.0A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters V-DFN3030-8 (Type Q) Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.