Datasheet Details
| Part number | DMT3011LDT |
|---|---|
| Manufacturer | Diodes Incorporated |
| File Size | 822.84 KB |
| Description | DUAL N-CHANNEL MOSFET |
| Datasheet | DMT3011LDT-Diodes.pdf |
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Overview: A D VNAEN CWEPDRIONDFUOCRTM A T I O N DMT3011LDT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device Q1 Q2 V(BR)DSS 30V 30V RDS(ON) Max 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 11.1mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V ID Max TA = +25°C 8A 6.3A 10.7A 9.
| Part number | DMT3011LDT |
|---|---|
| Manufacturer | Diodes Incorporated |
| File Size | 822.84 KB |
| Description | DUAL N-CHANNEL MOSFET |
| Datasheet | DMT3011LDT-Diodes.pdf |
|
|
|
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications Mobile puting Point of Load Mechanical Data Case: V-DFN3030-8 (Type K) Case Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Fin
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