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DMT6004SCT - N-Channel MOSFET

General Description

and Applications This new generation MOSFET

Key Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Product Summary BVDSS 60V RDS(ON) max 3.65mΩ @ VGS = 10V ID TC = +25°C (Note 9) 100A DMT6004SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Low Input Capacitance  Low Input/Output Leakage  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.