Datasheet4U Logo Datasheet4U.com

DMT69M8LSS - N-Channel MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Power Management Functions DC-DC Converters Backlighting SO-8 S

Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • High Conversion Efficiency.
  • Low RDS(ON).
  • Ensures On-State Losses Are Minimized.
  • Excellent QGD x RDS(ON) Product (FOM).
  • Advanced Technology for DC-DC Converters.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

📥 Download Datasheet

Datasheet preview – DMT69M8LSS

Datasheet Details

Part number DMT69M8LSS
Manufacturer DIODES
File Size 484.19 KB
Description N-Channel MOSFET
Datasheet download datasheet DMT69M8LSS Datasheet
Additional preview pages of the DMT69M8LSS datasheet.
Other Datasheets by Diodes

Full PDF Text Transcription

Click to expand full text
ADVANCE INNEFWORPRMOADTIUOCNT DMT69M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 12mΩ @ VGS = 10V 14mΩ @ VGS = 4.5V ID Max TA = +25°C 9.8A 8.4A Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  High Conversion Efficiency  Low RDS(ON) – Ensures On-State Losses Are Minimized  Excellent QGD x RDS(ON) Product (FOM)  Advanced Technology for DC-DC Converters  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Published: |