DMT8012LSS Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMT8012LSS 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) Max 16.5mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID Max TA = +25°C 9.7A 8.

Datasheet Details

Part number	DMT8012LSS
Manufacturer	Diodes Incorporated
File Size	468.74 KB
Description	N-CHANNEL MOSFET
Datasheet	DMT8012LSS-Diodes.pdf

General Description

and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.

This device is ideal for use in:  Notebook Battery Power Management  Loadswitches  Backlighting  Power Management Functions  DC-DC Converters Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Finish – Matte Tin Annealed over Copper Leadframe.

Key Features

100% Unclamped Inductive Switch (UIS) Test in Production.
High Conversion Efficiency.
Low RDS(ON).
Minimizes On-State Losses.
Low Input Capacitance.
Fast Switching Speed.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Reliability.

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