DMT8012LSS Description
and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in: Notebook Battery Power Management Loadswitches Backlighting Power Management Functions DC-DC Converters Case:.
DMT8012LSS Key Features
- 100% Unclamped Inductive Switch (UIS) Test in Production
- High Conversion Efficiency
- Low RDS(ON)
- Minimizes On-State Losses
- Low Input Capacitance
- Fast Switching Speed
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability