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DMTH10H015LK3 - N-CHANNEL MOSFET

General Description

This new generation MOSFET

Key Features

  • Rated to +175°C.
  • Ideal for High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green DMTH10H015LK3 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 15mΩ @ VGS = 10V 18mΩ @ VGS = 6.0V 25mΩ @ VGS = 4.5V ID TC = +25°C 52.5A 49.5A 40.8A Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes Power Losses  Low QG – Minimizes Switching Losses  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.