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DMTH6004SK3 - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Rated to +175°C.
  • Ideal For High Ambient Temperature Environments.
  • 100% Unclamped Inductive Switching.
  • Ensures More Reliable and Robust End.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green DMTH6004SK3 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 3.8mΩ @ VGS = 10V ID Max TC = +25°C (Note 9) 100A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  Rated to +175°C – Ideal For High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes Power Losses  Low QG – Minimizes Switching Losses  Lead-Free Finish; RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free.