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DMTH8012LK3 - N-Channel MOSFET

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Synchronous Rectifier Backlighting Power Management Functions DC-DC

Features

  • Rated to +175C.
  • ideal for high ambient temperature environments.
  • Low RDS(ON).
  • ensures on state losses are minimized.
  • High Conversion Efficiency.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: TO252.
  • Case Material: Molded Plastic, “Green” Molding Compound.

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Datasheet Details

Part number DMTH8012LK3
Manufacturer DIODES
File Size 531.12 KB
Description N-Channel MOSFET
Datasheet download datasheet DMTH8012LK3 Datasheet
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NEW PRODUCT Green DMTH8012LK3 80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) max 16mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V ID max TC = +25°C 50A 43A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Synchronous Rectifier  Backlighting  Power Management Functions  DC-DC Converters TO252 Features  Rated to +175C – ideal for high ambient temperature environments  Low RDS(ON) – ensures on state losses are minimized  High Conversion Efficiency  Low Input Capacitance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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