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DSS2515M - TRANSISTOR

Key Features

  • BVCEO > 15V.
  • IC = 500mA High Collector Current.
  • ICM = 1A Peak Pulse Current.
  • PD = 1000mW Power Dissipation.
  • Low Collector-Emitter Saturation Voltage, VCE(sat).
  • 0.60mm2 Package Footprint, 13 times Smaller than SOT23.
  • 0.5mm Height Package Minimizing Off-Board Profile.
  • Complementary PNP Type DSS3515M.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DSS2515M 15V NPN LOW VCE(sat) TRANSISTOR IN DFN1006 Features  BVCEO > 15V  IC = 500mA High Collector Current  ICM = 1A Peak Pulse Current  PD = 1000mW Power Dissipation  Low Collector-Emitter Saturation Voltage, VCE(sat)  0.60mm2 Package Footprint, 13 times Smaller than SOT23  0.5mm Height Package Minimizing Off-Board Profile  Complementary PNP Type DSS3515M  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability X1-DFN1006-3 Mechanical Data  Case: X1-DFN1006-3  Case Material: Molded Plastic, "Green" Molding Compound.