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DSS3515M - 15V PNP TRANSISTOR

Key Features

  • BVCEO > -15V.
  • IC = -500mA High Collector Current.
  • ICM = -1A Peak Pulse Current.
  • PD = 1000mW Power Dissipation.
  • Low Collector-Emitter Saturation Voltage, VCE(sat).
  • 0.60mm2 Package Footprint, 13 Times Smaller than SOT23.
  • 0.5mm Height Package Minimizing Off-Board Profile.
  • Complementary NPN Type DIODES™ DSS2515M.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • This part is qualified to.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DSS3515M 15V PNP LOW SATURATION TRANSISTOR IN X1-DFN1006-3 Features  BVCEO > -15V  IC = -500mA High Collector Current  ICM = -1A Peak Pulse Current  PD = 1000mW Power Dissipation  Low Collector-Emitter Saturation Voltage, VCE(sat)  0.60mm2 Package Footprint, 13 Times Smaller than SOT23  0.5mm Height Package Minimizing Off-Board Profile  Complementary NPN Type DIODES™ DSS2515M  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.