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DSS3540M - TRANSISTOR

Key Features

  • BVCEO > -40V.
  • IC = -500mA High Collector Current.
  • ICM = -1A Peak Pulse Current.
  • PD = 1000mW Power Dissipation.
  • Low Collector-Emitter Saturation Voltage, VCE(sat).
  • 0.60mm2 Package Footprint, 13 times Smaller than SOT23.
  • 0.5mm Height Package Minimizing Off-Board Profile.
  • Complementary NPN Type DSS2540M.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. "Green" Device (Note 3).
  • Qualified to AEC-Q101 Standards f.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DSS3540M Features  BVCEO > -40V  IC = -500mA High Collector Current  ICM = -1A Peak Pulse Current  PD = 1000mW Power Dissipation  Low Collector-Emitter Saturation Voltage, VCE(sat)  0.60mm2 Package Footprint, 13 times Smaller than SOT23  0.5mm Height Package Minimizing Off-Board Profile  Complementary NPN Type DSS2540M  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. "Green" Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability 40V PNP LOW VCE(sat) TRANSISTOR Mechanical Data  Case: X1-DFN1006-3  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  NiPdAu e4 Solderable per MIL-STD-202, Method 208  Weight: 0.