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DSS4160FDB - 60V DUAL NPN LOW VCE(SAT) TRANSISTOR

Key Features

  • BVCEO > 60V.
  • IC = 1A High Continuous Collector Current.
  • RCE(SAT) = 180mΩ for a Low Equivalent On-Resistance.
  • Low Saturation Voltage VCE(SAT) < 220mV @ 1A.
  • PD up to 2.47W for Power-Demanding.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  BVCEO > 60V  IC = 1A High Continuous Collector Current  RCE(SAT) = 180mΩ for a Low Equivalent On-Resistance  Low Saturation Voltage VCE(SAT) < 220mV @ 1A  PD up to 2.47W for Power-Demanding Applications  RθJA Efficient, 40% Lower than SOT26  Low Profile 0.6mm High Package for Thin Applications  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Application  Load Switches  Power Management  Charging Circuits  Power Switches (e.g. Motors, Fans) U-DFN2020-6 (Type B) 6 DSS4160FDB 60V DUAL NPN LOW VCE(SAT) TRANSISTOR Mechanical Data  Case: U-DFN2020-6 (Type B)  Case Material: Molded Plastic. “Green” Molding Compound.