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DTM3A25P20NFDB - 25V PNP LOW SAT TRANSISTOR

Key Features

  • Mechanical Data.
  • Combination of PNP low VCE(sat) Transistor and N-Channel MOSFET.
  • Very low collector-emitter saturation voltage VCE(sat).
  • High Collector Current Capability IC and ICM.
  • High Collector Current Gain (hFE) at high IC.
  • PD up to 2.47W for power demanding.

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DTM3A25P20NFDB 25V PNP LOW SAT TRANSISTOR WITH N-CHANNEL MOSFET Features Mechanical Data  Combination of PNP low VCE(sat) Transistor and N-Channel MOSFET  Very low collector-emitter saturation voltage VCE(sat)  High Collector Current Capability IC and ICM  High Collector Current Gain (hFE) at high IC  PD up to 2.47W for power demanding applications  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Case: U-DFN2020-6 (Type B)  UL Flammability Rating 94V-0  Case Material: Molded Plastic. “Green” Molding Compound.  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, Method 208 e4  Weight: 0.