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DXT690BP5 - NPN HIGH GAIN TRANSISTOR

Key Features

  • BVCEO > 45V.
  • IC = 3A High Continuous Collector Current.
  • ICM = 6A Peak Collector Current.
  • High gain device >400 @1A.
  • RCE(sat) = 77mΩ for low equivalent On-Resistance.
  • hFE specified up to 6A for a high gain hold up.
  • 43% smaller than SOT223; 60% smaller than TO252.
  • Maximum height just 1.1mm.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qu.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • BVCEO > 45V • IC = 3A High Continuous Collector Current • ICM = 6A Peak Collector Current • High gain device >400 @1A • RCE(sat) = 77mΩ for low equivalent On-Resistance • hFE specified up to 6A for a high gain hold up • 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free.