Diodes Incorporated FMMT2222
SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS
FEATURES
* Fast switching PARTMARKING DETAILS FMMT2222 1BZ FMMT2222A 1P FMMT2222R 2P FMMT2222AR 3P COMPLEMENTARY TYPES FMMT2222 FMMT2907 FMMT2222A FMMT2907A E C BABSOLUTE MAXIMUM RATINGS
. PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 30 40 V Emitter-Base Voltage VEBO 5 6 V Continuous Collector Current IC 600 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °CELECTRICAL CHARACTERISTICS
(at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector-Base V(BR)CBO 60 Breakdown Voltage 75 V IC=10µA, IE=0 Collector-Emitter V(BR)CEO 30 40 V IC=10mA, IB=0 Breakdown Voltage Emitter-Base V(BR)EBO 5 Breakdown Voltage 6 V IE=10µA, IC=0 Collector Cut-Off ICBO Current Emitter Cut-Off IEBO Current 10 nA VCB=50V, IE=0 10 µA VCB=60V, IE=0 10 nA VCB=50V, IE=0, Tamb=150°C 10 µA VCB=60V, IE=0, Tamb=150°C 10 10 nA...