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FMMT634Q Datasheet NPN DARLINGTON TRANSISTOR

Manufacturer: Diodes Incorporated

General Description

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

Overview

Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

Key Features

  • BVCEO > 100V.
  • IC = 900mA high Continuous Collector Current.
  • ICM = 5A Peak Pulse Current.
  • 625mW Power dissipation.
  • hFE > 5k up to 2A for high current gain hold up.
  • Complementary PNP Type: FMMT734Q.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) A Product Line of Diodes Incorporated FMMT634Q 100V NPN.