FMMT634Q
Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.
Key Features
- BVCEO > 100V
- IC = 900mA high Continuous Collector Current
- ICM = 5A Peak Pulse Current
- 625mW Power dissipation
- hFE > 5k up to 2A for high current gain hold up
- Complementary PNP Type: FMMT734Q
- Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4) A Product Line of Diodes Incorporated FMMT634Q
