Datasheet4U Logo Datasheet4U.com

FMMT717 - 12V PNP SILICON LOW SATURATION TRANSISTOR

Key Features

  • BVCEO > -12V.
  • IC = -2.5A Continuous Collector Current.
  • ICM = -10A Peak Pulse Current.
  • Low Saturation Voltage E. g. -17mV Max @ IC = -100mA.
  • RCE(sat) = 72mΩ at 2.5A for a low equivalent on-resistance.
  • 625mW power dissipation.
  • hFE characterized up to -10A for high current gain hold-up.
  • Complementary NPN Type: FMMT617.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • An automotive-comp.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FMMT717 Switching Transistor Kexin
FMMT718 SILICON POWER (SWITCHING) TRANSISTORS Zetex Semiconductors
FMMT718 Switching Transistor Kexin
FMMT720 Switching Transistor Kexin
FMMT722 SILICON POWER (SWITCHING) TRANSISTORS Zetex Semiconductors

Other Datasheets by Diodes Incorporated

Part Number Description
FMMT718 PNP SILICON LOW SATURATION TRANSISTOR
FMMT720 PNP SILICON LOW SATURATION TRANSISTOR
FMMT722 PNP SILICON LOW SATURATION TRANSISTOR
FMMT723 PNP SILICON LOW SATURATION TRANSISTOR
FMMT2222 SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FMMT717 12V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features  BVCEO > -12V  IC = -2.5A Continuous Collector Current  ICM = -10A Peak Pulse Current  Low Saturation Voltage E.g. -17mV Max @ IC = -100mA.  RCE(sat) = 72mΩ at 2.5A for a low equivalent on-resistance  625mW power dissipation  hFE characterized up to -10A for high current gain hold-up  Complementary NPN Type: FMMT617  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.