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FMMT722 - PNP SILICON LOW SATURATION TRANSISTOR

Key Features

  • BVCEO > -70V.
  • IC = -1.5A Continuous Collector Current.
  • ICM = -3A Peak Pulse Current.
  • Low Saturation Voltage VCE(sat) < -220mV @ -1A.
  • RCE(SAT) = 140mΩ for a low equivalent on-resistance.
  • 625mW power dissipation.
  • hFE characterised up to -3A for high current gain hold-up.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Product Line of Diodes Incorporated FMMT722 70V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features • BVCEO > -70V • IC = -1.5A Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Saturation Voltage VCE(sat) < -220mV @ -1A • RCE(SAT) = 140mΩ for a low equivalent on-resistance • 625mW power dissipation • hFE characterised up to -3A for high current gain hold-up • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free.