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FMMT723 - PNP SILICON LOW SATURATION TRANSISTOR

Key Features

  • BVCEO > -100V.
  • IC = -1A High Continuous Collector Current.
  • ICM= -2.5A Peak Pulse Current.
  • Low Saturation Voltage VCE(sat) < -330mV @ -1A.
  • RCE(SAT) = 210mΩ for a Low Equivalent On-Resistance.
  • 625mW Power Dissipation.
  • hFE Characterized up to -1.5A for High Current Gain Hold-Up.
  • Complementary NPN Type: FMMT624.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • BVCEO > -100V • IC = -1A High Continuous Collector Current • ICM= -2.5A Peak Pulse Current • Low Saturation Voltage VCE(sat) < -330mV @ -1A • RCE(SAT) = 210mΩ for a Low Equivalent On-Resistance • 625mW Power Dissipation • hFE Characterized up to -1.5A for High Current Gain Hold-Up • Complementary NPN Type: FMMT624 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.