FZT651Q Description
This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.
FZT651Q Key Features
- BVCEO > 60V
- IC = 3A High Continuous Current
- ICM = 6A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < 300mV @1A
- plementary PNP Type: DIODES™ FZT751Q
- Lead-Free Finish; RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- The DIODES™ FZT651Q is suitable for automotive
FZT651Q Applications
- Matte Tin Plated Leads; Solderable per