Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:.
- Low RDS(ON) - minimizes conduction losses.
- Low VSD - reducing the losses due to body diode conduction.
- Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses.
- Low gate capacitance (Qg/Qgs) ratio.
- reduces risk of shoot-through or cross conduction currents at high frequencies.
- Avalanche rugged.
- IAR an.
G4812SS Datasheet
