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G4812SS - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:.
  • Low RDS(ON) - minimizes conduction losses.
  • Low VSD - reducing the losses due to body diode conduction.
  • Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses.
  • Low gate capacitance (Qg/Qgs) ratio.
  • reduces risk of shoot-through or cross conduction currents at high frequencies.
  • Avalanche rugged.
  • IAR an.

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DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V(BR)DSS 30V RDS(on) 15mΩ @ VGS= 10V 18.5mΩ @ VGS= 4.5V ID max TA = +25°C 10.7A 9.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.