ZABG4002 - Advanced Low Power Four-Stage GaAs FET Bias IC
Diodes Incorporated
General Description
The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs with a minimum of external components whilst operating from a minimal voltage supply and using minimal current.
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A Product Line of Diodes Incorporated
ZABG4002
LOW POWER 4 STAGE FET LNA BIAS CONTROLLER
Summary
The ZABG4002 is a four stage depletion mode FET bias controller intended primarily for satellite Low Noise Block’s (LNB’s), but its also suitable for other LNA applications such as those in found in PMR’s and microwave links. The ZABG4002 provides each FET with an independent protected negative gate voltage and positive drain voltage with user programmable drain current. Combining an advanced IC process and packaging techniques, the ZABG4002 helps minimise power consumption, component cost and PCB area whilst enhancing overall reliability.
Features NEW PRODUCT
• • • • • • • • • • • Four stage FET bias controller Operating range of 3.0V to 8.0V Low quiescent supply current, 1.
ZABG4002 Datasheet
