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ZABG4003 Datasheet

Manufacturer: Diodes Incorporated
ZABG4003 datasheet preview

Datasheet Details

Part number ZABG4003
Datasheet ZABG4003-Diodes.pdf
File Size 397.99 KB
Manufacturer Diodes Incorporated
Description 4 STAGE FET LNA BIAS CONTROLLER
ZABG4003 page 2 ZABG4003 page 3

ZABG4003 Overview

The ZABG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs monly used in satellite receiver LNBs with a minimum of external ponents whilst operating from a minimal voltage supply and using minimal current. The ZABG4003 has four FET bias stages that can be programmed to provide a constant drain current. Programming of the FET bias stage arrangement and the operating currents of each...

ZABG4003 Key Features

  • Provides Bias for up to 4 GaAs and HEMT FETs
  • Operating Range of 2.1V to 5V
  • Ultra-Low Operating Current of 0.95mA
  • Dynamic FET Protection
  • Amplifier FET Drain Current Selectable (4mA to 15mA)
  • Regulated Negative Rail Generator Requires only 1 External
  • Expended Temperature Range of -40°C to +105°C
  • U-QFN3030-16 (Type B) Surface Mount Package
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
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