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ZVN3310F - N-Channel MOSFET

General Description

This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure.

Key Features

  • High pulse current handling in linear mode.
  • Low input capacitance.
  • Fast switching speed.
  • Lead Free By Design/RoHS Compliant (Note 1) Mechanical Data.
  • Case: SOT-23.
  • Case Material: UL Flammability Classification Rating 94V-0.
  • Moisture sensitivity: Level 1 per J-STD-020.
  • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208.
  • Terminal Connections: See D.

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Full PDF Text Transcription (Reference)

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Product Summary VDS (V) RDS(ON) (Ω) 100 10 Description and Applications This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This MOSFET is suitable for general purpose applications. • General purpose 100V FET • Power management • Disconnect switches • Telecoms • Complementary Type – ZVP3310F A Product Line of Diodes Incorporated ZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.