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ZVP4525E6 - 250V P-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This 250V enhancement mode P-channel MOSFET provides users with a competitive specification.

It offers efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown.

Key Features

  • High voltage.
  • Low on-resistance.
  • Fast switching speed.
  • Low gate drive.
  • Low threshold.
  • Complementary N-channel Type ZVN4525E6.
  • SOT23-6 package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT26.
  • Case Material: Molded Plastic. UL Flammability Classifica.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION Product Summary V(BR)DSS -250V RDS(ON) max 14Ω @ VGS= -10V 18Ω @ VGS= -3.5V ID max TA = +25°C -197mA -175mA Description This 250V enhancement mode P-channel MOSFET provides users with a competitive specification. It offers efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. SOT89 and SOT223 versions are also available.