ZXMC10A816N8 - Dual MOSFET

Diodes Incorporated

General Description

This new generation complementary dual MOSFET

Key Features

low on-resistance achievable with low gate drive. D1 D2 Features.
100 V Complementary in SOIC package Low on-resistance Fast switching speed Low voltage (VGS = 4.5 V) gate drive G1 S1 Q1 N-Channel G2 S2 Q2 P-Channel.

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ZXMC10A816N8 dual mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	ZXMC10A816N8
Manufacturer	Diodes Incorporated
File Size	216.58 KB
Description	Dual MOSFET
Datasheet	ZXMC10A816N8 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com A Product Line of Diodes Incorporated ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET Summary Device V(BR)DSS (V) QG (nC) RDS(on) (Ω) 0.230 @ VGS= 10V Q1 100 9.2 0.300 @ VGS= 4.5V 0.235 @ VGS= -10V Q2 -100 16.5 0.320 @ VGS= -4.5V -1.9 1.9 -2.2 ID (A) TA= 25°C 2.1 Description This new generation complementary dual MOSFET features low on-resistance achievable with low gate drive. D1 D2 Features • • • • 100 V Complementary in SOIC package Low on-resistance Fast switching speed Low voltage (VGS = 4.