ZXMC3AMC Datasheet | Diodes Incorporated

.Data Sheet.co.kr A Product Line of Diodes Incorporated 30V PLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary ID max Device V(BR)DSS RDS(on) max 120mΩ @ VGS = 10V Q1 30V 180mΩ @ VGS = 4.5V 210mΩ @ VGS = -10V Q2 -30V 330mΩ @ VGS = -4.5V TA = 25°C (Notes 4 & 7) Features and Benefits - - - - - - - - Low profile package, for thin applications Low RθJA, thermally efficient package 2 6mm footprint, 50% smaller than TSOP6 and SOT23-6 Low on-resistance Fast switching speed “Lead-Free”, Ro HS pliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability 3.7A 3.0A -2.7A -2.2A Mechanical Data - - - - - - - Case: DFN3020B-8 Terminals: Pre-Plated Ni Pd Au leadframe Nominal package height: 0.8mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (approximate) Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - - - - MOSFET gate drive LCD backlight inverters Motor control Portable applications DFN3020B-8 D2 D2 D1 D1 D1 D2 D2 D1...