ZXMHC10A07N8
ZXMHC10A07N8 is MOSFET H-Bridge manufactured by Diodes Incorporated.
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A Product Line of Diodes Incorporated
100V SO8 plementary enhancement mode MOSFET H-Bridge
Summary
Device V(BR)DSS QG RDS(on) 0.70Ω @ VGS= 10V N-CH 100V 2.9n C 0.90Ω @ VGS= 6.0V 1.00Ω @ VGS= -10V P-CH -100V 3.5n C 1.45Ω @ VGS= -6.0V -0.7A 0.9A -0.9A ID TA= 25°C 1.0A
Description
This new generation plementary MOSFET H-Bridge Features low on-resistance achievable with low gate drive.
P1G
P1S/P2S
P2G
Features
- 2 x N + 2 x P channels in a SOIC package
P1D/N1D
P2D/N2D
Applications
- -
DC Motor control DC-AC Inverters
N1G
N2G
N1S/N2S
Ordering information
Device ZXMHC10A07N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500
Device marking
ZXMHC 10A07
Issue 1.0
- March 2009
© Diodes Incorporated
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